skip to main content

Title: Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn

The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n-ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the accumulation of an excess number of Ni{sub 1+x} atoms in tetrahedral interstices of the crystal structure of the semiconductor is found and the donor nature of such structural defects that change the properties of the semiconductor is established. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and strongly compensated semiconductor.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [3] ;  [4]
  1. National Academy of Sciences of Ukraine, Pidstrygach Institute of Applied Problems in Mechanics and Mathematics (Ukraine)
  2. Universitaet Wien, Institut fuer Physikalische Chemie (Austria)
  3. National University Lvivska Politekhnika (Ukraine)
  4. Ivan Franko National University of Lviv (Ukraine)
  5. CNRS, Laboratoire de Neel (France)
Publication Date:
OSTI Identifier:
22121710
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BUILDUP; CRYSTAL STRUCTURE; DEFECTS; DISTRIBUTION; DOPED MATERIALS; ELECTRON DENSITY; IMPURITIES; MAGNETIC PROPERTIES; NICKEL; NICKEL ALLOYS; SEMICONDUCTOR MATERIALS; TIN ALLOYS; ZIRCONIUM ALLOYS