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Title: New acceptor centers of the background impurities in p-CdZnTe

Low-temperature photoluminescence data are used to study the redistribution of the background impurities and host components of p-CdZnTe single crystals with a resistivity of 1-50 {Omega} cm upon their interaction with infrared laser radiation. The effect of widening of the band gap and the formation of new acceptor centers in response to laser-stimulated changes in the system of intrinsic defects are established. The activation energy of the new acceptor centers is determined.
Authors:
;  [1]
  1. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
Publication Date:
OSTI Identifier:
22121709
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CADMIUM TELLURIDES; DEFECTS; IMPURITIES; INTERACTIONS; LASER RADIATION; MONOCRYSTALS; PHOTOLUMINESCENCE; ZINC TELLURIDES