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Title: Theory of steady-state plane tunneling-assisted impact ionization waves

The effect of band-to-band and trap-assisted tunneling on the properties of steady-state plane ionization waves in p{sup +}-n-n{sup +} structures is theoretically analyzed. It is shown that such tunneling-assisted impact ionization waves do not differ in a qualitative sense from ordinary impact ionization waves propagating due to the avalanche multiplication of uniformly distributed seed electrons and holes. The quantitative differences of tunneling-assisted impact ionization waves from impact ionization waves are reduced to a slightly different relation between the wave velocity u and the maximum field strength E{sub M} at the front. It is shown that disregarding impact ionization does not exclude the possibility of the existence of tunneling-assisted ionization waves; however, their structure radically changes, and their velocity strongly decreases for the same E{sub M}. A comparison of the dependences u(E{sub M}) for various ionization-wave types makes it possible to determine the conditions under which one of them is dominant. In conclusion, unresolved problems concerning the theory of tunneling-assisted impact ionization waves are discussed and the directions of further studies are outlined.
Authors:
 [1]
  1. Lenin All-Russian Electrical-Engineering Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22121700
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRONS; HOLES; IONIZATION; SEMICONDUCTOR MATERIALS; STEADY-STATE CONDITIONS; TOWNSEND DISCHARGE; TUNNEL EFFECT; VELOCITY