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Title: Effect of ultrasonic loading on current in Mo/n-n{sup +}-Si with Schottky barriers

The results obtained in experimental studies of the operation of silicon Schottky diodes subjected to ultrasonic loading (oscillations frequency of 9.6 MHz; intensity of longitudinal waves as high as 0.7 W/cm{sup 2}) are reported. A reversible acoustically induced decrease in the Schottky barrier height (to 0.13 V) and an increase in the saturation and reverse current (by as much as 60%) are observed. It is shown that ultrasound does not affect the ideality factor of the diodes and the tunneling component of the reverse current. The process of electron transport is considered within the context of the model of an inhomogeneous Schottky barrier; it is shown that the observed effects can be related to the acoustically induced ionization of defects, which are located at the metal-semiconductor interface.
Authors:
 [1]
  1. Taras Shevchenko National University of Kyiv (Ukraine)
Publication Date:
OSTI Identifier:
22121699
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEFECTS; ELECTRONS; INTERFACES; IONIZATION; MHZ RANGE 01-100; OSCILLATIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SILICON; TUNNEL EFFECT