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Title: Properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films obtained by pulsed laser ablation

The properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films of variable thickness deposited onto Al{sub 2}O{sub 3}, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180 Degree-Sign C in a vacuum chamber with a residual pressure of 10{sup -5} Torr. The thickness of the films amounted to 40-1500 nm. The structure of the bulk material of the targets and films is investigated by the methods of X-ray diffraction and transmission high-energy electron diffraction, respectively. The electrical properties of the films are investigated in the temperature range of 253-310 K. It is shown that the films have semiconductor properties. The structural features of the films determine their optical parameters.
Authors:
 [1] ; ; ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. Drogobych State Pedagogical University (Ukraine)
  2. National University 'Lviv Polytechnic' (Ukraine)
  3. National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)
  4. Rzeszow University (Poland)
  5. Polish Academy of Sciences, Institute of Physics (Poland)
Publication Date:
OSTI Identifier:
22121698
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABLATION; ALUMINIUM OXIDES; ANTIMONY SELENIDES; ANTIMONY SULFIDES; ELECTRICAL PROPERTIES; ELECTRON DIFFRACTION; LASERS; POTASSIUM CHLORIDES; PULSES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; X-RAY DIFFRACTION