Effect of surface passivation by SiN/SiO{sub 2} of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613070087· OSTI ID:22121697

Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali ^[1]; Gaquiere, Christophe ^[2]; Maaref, Hassen ^[1]

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1. Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia)
2. Universite des Sciences et Technologies de Lille, Institut d'Electronique de Microelectronique et de Nanotechnologie IEMN, Departement hyperfrequences et Semiconducteurs (France)

Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO{sub 2} passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO{sub 2} film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.

• OSTI ID: 22121697
• Journal Information: Semiconductors, Vol. 47, Issue 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
ELECTRON MOBILITY
FILMS
GALLIUM NITRIDES
PASSIVATION
PERFORMANCE
SEMICONDUCTOR MATERIALS
SILICON NITRIDES
SILICON OXIDES
SURFACES
TRANSISTORS