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Title: Investigation of structure, magnetic, and transport properties of Mn-doped SiC films

Mn-doped SiC films were fabricated by radio frequency magnetron sputtering technique. The structure, composition, and magnetic and transport properties of the films were investigated. The results show the films have the 3C-SiC crystal structure and the doped Mn atoms in the form of Mn{sup 2+} ions substitute for C sites in SiC lattice. All the films are ferromagnetic at 300 K, and the ferromagnetism in films arises from the doped Mn atoms and some extended defects. In addition, the saturation magnetization increases with the Mn-doped concentration increasing. The Mn doping does not change the semiconductor characteristics of the SiC films.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [2] ;  [1] ;  [2] ;  [2]
  1. School of Material Science and Engineering, Tianjin University, Tianjin 300172 (China)
  2. (China)
  3. Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384 (China)
Publication Date:
OSTI Identifier:
22121656
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 31; Journal Issue: 4; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; DEFECTS; DEPOSITION; DOPED MATERIALS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIZATION; MAGNETRONS; MANGANESE IONS; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; THIN FILMS