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Title: Stability and etching of titanium oxynitride films in hydrogen microwave plasma

Epitaxial titanium oxynitride (TiNO) films deposited on MgO by pulsed laser deposition were treated in hydrogen microwave plasma. Scanning electron microscopy and x-ray photoelectron spectroscopy were used to examine the stability and etching of TiNO which strongly depended on hydrogen gas pressure. TiNO was very chemically stable and remained with good crystallinity under hydrogen pressure below 5300 Pa. With increase of pressure, it may lead to the formation of etch pits in inverse pyramid shape. The etch mechanism as well as the effects of gas pressure and etching time are also presented.
Authors:
; ;  [1]
  1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 1001, Taiwan 300 (China)
Publication Date:
OSTI Identifier:
22121653
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 31; Journal Issue: 4; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITS; ENERGY BEAM DEPOSITION; EPITAXY; ETCHING; FILMS; HYDROGEN; LASER RADIATION; LAYERS; MAGNESIUM OXIDES; MICROWAVE RADIATION; NITRIDES; OXYGEN COMPOUNDS; PLASMA; PULSED IRRADIATION; SCANNING ELECTRON MICROSCOPY; SHAPE; SPUTTERING; STABILITY; TITANIUM COMPOUNDS; X-RAY PHOTOELECTRON SPECTROSCOPY