Gamma irradiation effects in W films

Journal Article · Mon May 06 00:00:00 EDT 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4804093· OSTI ID:22116038

Claro, Luiz H. ^[1]; Santos, Ingrid A. ^[2]; Silva, Cassia F. ^[3]

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1. Instituto de Estudos Avancados - IEAv, Rod. dos Tamoios, km 5,5, CEP: 12228-840, Sao Jose dos Campos, SP (Brazil) and Faculdade de Tecnologia Sao Francisco - FATESF, Av. Siqueira Campos, 1174, CEP: 12207-000, Jacarei (Brazil)
2. Instituto de Estudos Avancados - IEAv, Rod. dos Tamoios, km 5,5, CEP: 12228-840, Sao Jose dos Campos, SP (Brazil)
3. Faculdade de Tecnologia Sao Francisco - FATESF, Av. Siqueira Campos, 1174, CEP: 12207-000, Jacarei, SP (Brazil)

Using the van Der Pauw methodology, the surface resistivity of irradiated tungsten films deposited on Silicon substrate was measured. The films were exposed to {gamma} radiation using a isotopic {sup 60}Co source in three irradiation stages attaining 40.35 kGy in total dose. The obtained results for superficial resistivity display a time annealing features and their values are proportional to the total dose.

• OSTI ID: 22116038
• Journal Information: AIP Conference Proceedings, Vol. 1529, Issue 1; Conference: 35. Brazilian workshop on nuclear physics, Sao Paulo (Brazil), 2-6 Sep 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
COBALT 60
ELECTRIC CONDUCTIVITY
GAMMA RADIATION
IRRADIATION
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
SILICON
SUBSTRATES
SURFACES
THIN FILMS
TUNGSTEN