Chemical reactions at CdS heterojunctions with CuInSe{sub 2}
- Department of Materials Science and Engineering, University of Illinois, 1304 West Green Street, Urbana, Illinois 61801 (United States)
The stability of the CdS/CuInSe{sub 2} (CIS) heterojunction is critical to understanding the projected lifetime of CIS devices and the effect of processing conditions on the nanoscale chemistry of the heterojunction. This article reports the results of annealing heterojunctions between CdS deposited by chemical bath deposition and single crystal and polycrystalline CIS films between 200 and 500 Degree-Sign C for 10 to 150 min. No atomic movement was observed by secondary ion mass spectrometry at temperatures of 300 Degree-Sign C and below. At 400 Degree-Sign C even for the shortest time studied, Cu and In were found throughout the region initially consisting of CdS only and Cd was found to have moved into the CIS. In the polycrystal, annealing at 500 Degree-Sign C resulted in movement of Cd throughout the CIS layer. No time dependence was observed in the 400 and 500 Degree-Sign C anneals indicating that a reaction had occurred forming a compound that was in thermodynamic equilibrium with the remaining CIS. Diffusion turns on rapidly between 300 and 400 Degree-Sign C, indicating a high activation energy for atomic movement ({approx}2.4 eV). The onset of diffusion is consistent with the onset of Cu diffusion in CIS.
- OSTI ID:
- 22116028
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 2; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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