Ultrafast broadband spectroscopy of crystalline bismuth
Femtosecond spectroscopy in the wavelength range 0.4 - 2.3 {mu}m has been used to probe ultrafast electronic and lattice processes in bismuth. The photoresponse of a bismuth crystal is shown to comprise components with relaxation times of 1 ps, 7 ps, and {approx}1 ns. The electron-hole and electron-phonon interaction strengths in bismuth are found to depend significantly on the wave vector in the {Gamma}-T direction of the Brillouin zone. Comparison of the spectral dependences of the amplitudes of coherent E{sub g} and A{sub 1g} phonons and the corresponding dependences of the Raman scattering cross sections indicates that these phonon modes differ in generation mechanism. The generation of coherent A{sub 1g} phonons is mainly due to displacement of the equilibrium position of atoms in the crystal lattice in a nonequilibrium state. This process differs fundamentally from resonance Raman scattering responsible for the coherent excitation of low-symmetry phonon modes. (extreme light fields and their applications)
- OSTI ID:
- 22113685
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 43, Issue 4; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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