Structural and optical properties of thin In{sub 2}O{sub 3} films produced by autowave oxidation

Journal Article · Mon Apr 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613040210· OSTI ID:22105519

Myagkov, V. G.; Ivanenko, A. A.; Nemtsev, I. V.; Bykova, L. E. ^[1]; Bondarenko, G. N. ^[2]; Mihlin, J. L. ^[1]; Maksimov, I. A. ^[2]; Ivanov, V. V.; Balashov, S. V.; Karpenko, D. S. ^[3]

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1. Russian Academy of Sciences, Kirenskii Institute of Physics, Siberian Branch (Russian Federation)
2. Russian Academy of Sciences, Institute of Chemistry and Chemical Technology, Siberian Branch (Russian Federation)
3. Joint Stock Company 'Academician M.F. Reshetnev Information Satellite Systems' (Russian Federation)

Cubic-phase In{sub 2}O{sub 3} films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20-40 nm. The optical and electrical properties are studied for In{sub 2}O{sub 3} films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 Multiplication-Sign 10{sup -2} {Omega} cm.

• OSTI ID: 22105519
• Journal Information: Semiconductors, Vol. 47, Issue 4; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
FILMS
GRAIN SIZE
INDIUM OXIDES
OPACITY
OXIDATION
PHOTOELECTRON SPECTROSCOPY
THICKNESS