Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface

Journal Article · Sun Apr 21 00:00:00 EDT 2013 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/1.4801324· OSTI ID:22105481

Nichau, A.; Schnee, M.; Schubert, J.; Bernardy, P.; Hollaender, B.; Buca, D.; Mantl, S. ^[1]; Besmehn, A.; Breuer, U. ^[2]; Castro, G. R. ^[3]; Muecklich, A.; Borany, J. von ^[4]

---

1. Peter Gruenberg Institute 9 (PGI9-IT), Forschungszentrum Juelich, 52425 Juelich (Germany)
2. Central Division for Chemical Analysis (ZCH), Forschungszentrum Juelich, 52425 Juelich (Germany)
3. Spanish CRG BM25 Beamline-SpLine, European Synchrotron Radiation Facility (ESRF), Rue Jules Horowitz BP 220, F-38043 Grenoble, Cedex 09 (France)
4. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum' Dresden-Rossendorf e.V., 01314 Dresden (Germany)

Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu-O bonds, whereby the diffusion of La was found to be less important.

• OSTI ID: 22105481
• Journal Information: Journal of Chemical Physics, Vol. 138, Issue 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CURIUM OXIDES
DIELECTRIC MATERIALS
DIFFUSION
FIELD EFFECT TRANSISTORS
HARD X RADIATION
HEAT TREATMENTS
INTERFACES
LANTHANUM
LANTHANUM COMPOUNDS
LUTETIUM OXIDES
PHOTOEMISSION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICATES
SILICON
THIN FILMS
TIN
TITANIUM NITRIDES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY