An XPS study on the chemical bond structure at the interface between SiO{sub x}N{sub y} and N doped polyethylene terephthalate

Journal Article · Thu Mar 14 00:00:00 EDT 2013 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/1.4794782· OSTI ID:22105429

Wanyu, Ding ^[1]; Li, Li; Lina, Zhang; Weiping, Chai ^[1]; Dongying, Ju ^[2]; Shou, Peng ^[3]

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1. School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China)
2. Department of Material Science and Engineering, Saitama Institute of Technology, Fukaya 369-0293 (Japan)
3. China Triumph International Engineering Co., Ltd., 2000 Zhongshanbei Road, 200063 Shanghai (China)

The super-thin silicon oxynitride (SiO{sub x}N{sub y}) films were deposited onto the N doped polyethylene terephthalate (PET) surface. Varying the N doping parameters, the different chemical bond structures were obtained at the interface between the SiO{sub x}N{sub y} film and the PET surface. X-ray photoelectron spectra results showed that at the initial stage of SiO{sub x}N{sub y} film growth, the C=N bonds could be broken and C-N-Si crosslink bonds could be formed at the interface of SiO{sub x}N{sub y}/PET, which C=N bonds could be formed onto the PET surface during the N doping process. At these positions, the SiO{sub x}N{sub y} film could be crosslinked well onto the PET surface. Meanwhile, the doped N could crosslink the [SiO{sub 4}] and [SiN{sub 4}] tetrahedrons, which could easily form the dense layer structure at the initial stage of SiO{sub x}N{sub y} film growth, instead of the ring and/or chain structures of [SiO{sub 4}] tetrahedrons crosslinked by O. Finally, from the point of applying SiO{sub x}N{sub y}/PET complex as the substrate, the present work reveals a simple way to crosslink them, as well as the crosslink model and physicochemical mechanism happened at the interface of complex.

• OSTI ID: 22105429
• Journal Information: Journal of Chemical Physics, Vol. 138, Issue 10; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CHEMICAL BONDS
CROSS-LINKING
DEPOSITION
DOPED MATERIALS
INTERFACES
LAYERS
NITROGEN
POLYESTERS
SILICATES
SILICON
SILICON NITRIDES
SILICON OXIDES
SPUTTERING
SUBSTRATES
SURFACES
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY