Terahertz photomixing using plasma resonances in double-graphene layer structures
- Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577 (Japan)
- Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580 (Japan)
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 1460-1920 (United States)
- Department of Electrical, Electronics, and Systems Engineering and Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
We propose the concept of terahertz (THz) photomixing enabled by the interband electron transitions due to the absorption of modulated optical radiation in double-graphene layer (double-GL) structures and the resonant excitation of plasma oscillations. Using the developed double-GL photomixer (DG-PM) model, we describe its operation and calculate the device characteristics. The output power of the THz radiation exhibits sharp resonant peaks at the plasmonic resonant frequencies. The peak powers markedly exceed the output powers at relatively low frequencies. Due to relatively high quantum efficiency of optical absorption in GLs and short inter-GL transit time, the proposed DG-PM operating in the resonant plasma oscillation regime can surpass the photomixers based on the standard heterostructures.
- OSTI ID:
- 22102382
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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