Point defects introduced by InN alloying into In{sub x}Ga{sub 1-x}N probed using a monoenergetic positron beam

Journal Article · Thu Mar 28 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4795815· OSTI ID:22102318

Uedono, A. ^[1]; Tsutsui, T.; Watanabe, T.; Kimura, S.; Zhang, Y. ^[2]; Lozac'h, M. ^[2]; Sang, L. W.; Sumiya, M. ^[3]; Ishibashi, S. ^[4]

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1. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
2. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
3. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan)
4. Nanosystem Research Institute (NRI) 'RICS,' National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

Native defects in In{sub x}Ga{sub 1-x}N (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for In{sub x}Ga{sub 1-x}N showed that vacancy-type defects were introduced with increasing InN composition, and the major defect species was identified as complexes between a cation vacancy and a nitrogen vacancy. The concentration of the divacancy, however, was found to be suppressed by Mg doping. The momentum distribution of electrons at the In{sub x}Ga{sub 1-x}N/GaN interface was close to that in defect-free GaN or In{sub x}Ga{sub 1-x}N, which was attributed to localization of positrons at the interface due to the built-in electric field, and to suppression of positron trapping by vacancy-type defects. We have also shown that the diffusion property of positrons is sensitive to an electric field near the In{sub x}Ga{sub 1-x}N/GaN interface.

• OSTI ID: 22102318
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 12; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ANNIHILATION
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTALS
DIFFUSION
DOPPLER BROADENING
ELECTRIC FIELDS
GALLIUM ADDITIONS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM COMPOUNDS
INDIUM NITRIDES
INTERFACES
NITROGEN COMPOUNDS
ORGANOMETALLIC COMPOUNDS
POSITRON BEAMS
SEMICONDUCTOR MATERIALS
SPECTRA
TRAPPING
VACANCIES