Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby; Wright, Nick; O'Neill, Anthony; Horsfall, Alton; Goss, Jonathan; Cumpson, Peter

doi:10.1063/1.4795501

Title: Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

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Abstract

Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such as the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was usedmore »« less

Authors:

Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby; Wright, Nick; O'Neill, Anthony; Horsfall, Alton; Goss, Jonathan ^[1]; Cumpson, Peter ^[2]

School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)
School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)

Publication Date:: Thu Mar 21 00:00:00 EDT 2013

OSTI Identifier:: 22102314

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 113; Journal Issue: 11; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; ATOMIC FORCE MICROSCOPY; CARRIER DENSITY; CHEMICAL REACTIONS; DIFFUSION; EQUIPMENT; GRAPHENE; INTERFACES; LAYERS; NICKEL SILICIDES; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SILICON CARBIDES; SURFACES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats


                    Escobedo-Cousin, Enrique, Vassilevski, Konstantin, Hopf, Toby, Wright, Nick, O'Neill, Anthony, Horsfall, Alton, Goss, Jonathan, and Cumpson, Peter. Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon.  United States: N. p., 2013. 
        Web.  doi:10.1063/1.4795501.

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                    Escobedo-Cousin, Enrique, Vassilevski, Konstantin, Hopf, Toby, Wright, Nick, O'Neill, Anthony, Horsfall, Alton, Goss, Jonathan, & Cumpson, Peter. Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon.  United States.  https://doi.org/10.1063/1.4795501

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                    Escobedo-Cousin, Enrique, Vassilevski, Konstantin, Hopf, Toby, Wright, Nick, O'Neill, Anthony, Horsfall, Alton, Goss, Jonathan, and Cumpson, Peter. 2013.  
        "Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon".  United States.  https://doi.org/10.1063/1.4795501.

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@article{osti_22102314,

  title        = {Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon},

  author       = {Escobedo-Cousin, Enrique and Vassilevski, Konstantin and Hopf, Toby and Wright, Nick and O'Neill, Anthony and Horsfall, Alton and Goss, Jonathan and Cumpson, Peter},

  abstractNote = {Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such as the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.},

  doi          = {10.1063/1.4795501},

  url          = {https://www.osti.gov/biblio/22102314},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 11,

  volume       = 113,

  place        = {United States},

  year         = {Thu Mar 21 00:00:00 EDT 2013},

  month        = {Thu Mar 21 00:00:00 EDT 2013}

}

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