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Title: Electrical properties and thermal stability of Pd-doped copper nitride films

Abstract

Pd-doped copper nitride films with Pd concentrations up to 5.6 at. % were successfully synthesized by reactive magnetron sputtering of metal targets. Higher concentration of Pd (>5.6 at. %) would deteriorate the quality of the deposits. XPS and XRD data strongly suggest that Pd atoms occupy the centers of the Cu{sub 3}N unit cells rather than simply substituting for the Cu atoms. A reduction in the electrical resistivity by three orders of magnitude was observed when the Pd concentration increases from zero to 5.6 at. %. All the deposits with the Pd concentration up to 5.6 at. % exhibit n-typed conductivity behavior. The corresponding carrier concentrations increase by four orders of magnitude from 10{sup 17} to 10{sup 21} cm{sup -3}. Compared with the undoped copper nitride films, a weakly Pd-doped Cu{sub 3}N films possess fine thermal stability in vacuum. And the decomposition product after annealing at 450 Degree-Sign C exhibits a good metallic behavior, indicating that it qualifies the fabrication of conduct wires or metallic structures for the promising applications.

Authors:
; ; ; ; ;  [1]
  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, P. O. Box 603, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22102240
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 113; Journal Issue: 4; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CARRIER DENSITY; COPPER NITRIDES; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; PALLADIUM ADDITIONS; PYROLYSIS; REDUCTION; SPUTTERING; STABILITY; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Ji, A. L., Lu, N. P., Gao, L., Zhang, W. B., Liao, L. G., and Cao, Z. X. Electrical properties and thermal stability of Pd-doped copper nitride films. United States: N. p., 2013. Web. doi:10.1063/1.4788905.
Ji, A. L., Lu, N. P., Gao, L., Zhang, W. B., Liao, L. G., & Cao, Z. X. Electrical properties and thermal stability of Pd-doped copper nitride films. United States. https://doi.org/10.1063/1.4788905
Ji, A. L., Lu, N. P., Gao, L., Zhang, W. B., Liao, L. G., and Cao, Z. X. 2013. "Electrical properties and thermal stability of Pd-doped copper nitride films". United States. https://doi.org/10.1063/1.4788905.
@article{osti_22102240,
title = {Electrical properties and thermal stability of Pd-doped copper nitride films},
author = {Ji, A. L. and Lu, N. P. and Gao, L. and Zhang, W. B. and Liao, L. G. and Cao, Z. X.},
abstractNote = {Pd-doped copper nitride films with Pd concentrations up to 5.6 at. % were successfully synthesized by reactive magnetron sputtering of metal targets. Higher concentration of Pd (>5.6 at. %) would deteriorate the quality of the deposits. XPS and XRD data strongly suggest that Pd atoms occupy the centers of the Cu{sub 3}N unit cells rather than simply substituting for the Cu atoms. A reduction in the electrical resistivity by three orders of magnitude was observed when the Pd concentration increases from zero to 5.6 at. %. All the deposits with the Pd concentration up to 5.6 at. % exhibit n-typed conductivity behavior. The corresponding carrier concentrations increase by four orders of magnitude from 10{sup 17} to 10{sup 21} cm{sup -3}. Compared with the undoped copper nitride films, a weakly Pd-doped Cu{sub 3}N films possess fine thermal stability in vacuum. And the decomposition product after annealing at 450 Degree-Sign C exhibits a good metallic behavior, indicating that it qualifies the fabrication of conduct wires or metallic structures for the promising applications.},
doi = {10.1063/1.4788905},
url = {https://www.osti.gov/biblio/22102240}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 113,
place = {United States},
year = {Mon Jan 28 00:00:00 EST 2013},
month = {Mon Jan 28 00:00:00 EST 2013}
}