Atomic layer deposition of Al-doped ZnO thin films

Journal Article · Tue Jan 15 00:00:00 EST 2013 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4757764· OSTI ID:22099147

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro ^[1]

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1. Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

• OSTI ID: 22099147
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 1; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ALUMINIUM OXIDES
BOROSILICATE GLASS
CARRIER DENSITY
CRYSTAL GROWTH
DEPOSITION
DOPED MATERIALS
FLUORESCENCE
REFLECTION
REFLECTIVITY
SEEBECK EFFECT
THIN FILMS
X RADIATION
X-RAY DIFFRACTION
X-RAY FLUORESCENCE ANALYSIS
ZINC OXIDES