Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)
Abstract
Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.
- Authors:
-
- National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines)
- Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines)
- Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)
- Publication Date:
- OSTI Identifier:
- 22089653
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 112; Journal Issue: 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMPLITUDES; CRYSTAL DEFECTS; ELECTRIC FIELDS; ELECTROMAGNETIC RADIATION; FERMI LEVEL; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTRA; STRAINS; SUBSTRATES; THIN FILMS
Citation Formats
Sadia, Cyril P., Laganapan, Aleena Maria, Agatha Tumanguil, Mae, Estacio, Elmer, Somintac, Armando, Salvador, Arnel, Que, Christopher T., Yamamoto, Kohji, and Tani, Masahiko. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001). United States: N. p., 2012.
Web. doi:10.1063/1.4770267.
Sadia, Cyril P., Laganapan, Aleena Maria, Agatha Tumanguil, Mae, Estacio, Elmer, Somintac, Armando, Salvador, Arnel, Que, Christopher T., Yamamoto, Kohji, & Tani, Masahiko. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001). United States. https://doi.org/10.1063/1.4770267
Sadia, Cyril P., Laganapan, Aleena Maria, Agatha Tumanguil, Mae, Estacio, Elmer, Somintac, Armando, Salvador, Arnel, Que, Christopher T., Yamamoto, Kohji, and Tani, Masahiko. 2012.
"Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)". United States. https://doi.org/10.1063/1.4770267.
@article{osti_22089653,
title = {Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)},
author = {Sadia, Cyril P. and Laganapan, Aleena Maria and Agatha Tumanguil, Mae and Estacio, Elmer and Somintac, Armando and Salvador, Arnel and Que, Christopher T. and Yamamoto, Kohji and Tani, Masahiko},
abstractNote = {Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.},
doi = {10.1063/1.4770267},
url = {https://www.osti.gov/biblio/22089653},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 112,
place = {United States},
year = {Sat Dec 15 00:00:00 EST 2012},
month = {Sat Dec 15 00:00:00 EST 2012}
}