Electric field-tunable Ba{sub x}Sr{sub 1-x}TiO{sub 3} films with high figures of merit grown by molecular beam epitaxy

Journal Article · Mon Dec 17 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4773034· OSTI ID:22089632

Mikheev, Evgeny; Kajdos, Adam P.; Hauser, Adam J.; Stemmer, Susanne ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

We report on the dielectric properties of Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST) films grown by molecular beam epitaxy on epitaxial Pt bottom electrodes. Paraelectric films (x Less-Than-Or-Equivalent-To 0.5) exhibit dielectric losses that are similar to those of BST single crystals and ceramics. Films with device quality factors greater than 1000 and electric field tunabilities exceeding 1:5 are demonstrated. The results provide evidence for the importance of stoichiometry control and the use of a non-energetic deposition technique for achieving high figures of merit of tunable devices with BST thin films.

• OSTI ID: 22089632
• Journal Information: Applied Physics Letters, Vol. 101, Issue 25; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
CERAMICS
DEPOSITION
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
ELECTRIC FIELDS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
QUALITY FACTOR
STOICHIOMETRY
STRONTIUM COMPOUNDS
THIN FILMS
TITANATES