Investigation of photoelectrochemical-oxidized p-GaSb films

Journal Article · Mon Dec 17 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4772497· OSTI ID:22089623

Lee, Hsin-Ying; Huang, Hung-Lin ^[1]; Lee, Ching-Ting ^[2]; Petrovich Pchelyakov, Oleg; Andreevich Pakhanov, Nikolay ^[3]

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1. Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan (China)
2. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
3. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk (Russian Federation)

GaSb oxide films were directly formed on the p-GaSb films using the bias-assisted photoelectrochemical (PEC) oxidation method. X-ray photoelectron spectroscopy analysis indicated that the resulting GaSb oxide films consisted of Ga{sub 2}O{sub 3}, Sb{sub 2}O{sub 3}, and Sb{sub 2}O{sub 5}. Different from the non-PEC oxides, the PEC derived oxide contained much more Sb{sub 2}O{sub 5} than Sb{sub 2}O{sub 3}. Besides, the interface state density between the PEC oxide and p-GaSb was lower than that of the ordinary oxide/p-GaSb interface. The high quality of the PEC-oxidized GaSb films was attributed to the increase of the stable Sb{sub 2}O{sub 5} content and decrease of the elemental Sb content in the films.

• OSTI ID: 22089623
• Journal Information: Applied Physics Letters, Vol. 101, Issue 25; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ANTIMONY OXIDES
ELECTROCHEMISTRY
GALLIUM ANTIMONIDES
GALLIUM OXIDES
INTERFACES
OXIDATION
PHOTOCHEMISTRY
SEMICONDUCTOR MATERIALS
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY