Effects produced by iodine irradiation on high resistivity silicon

Journal Article · Mon Dec 10 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4772015· OSTI ID:22089590

Lazanu, S.; Slav, A.; Lepadatu, A. -M.; Stavarache, I.; Palade, C.; Iordache, G.; Ciurea, M. L. ^[1]

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1. National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania)

The effects of 5 Multiplication-Sign 10{sup 11} cm{sup -26+}I{sup 127} ions of 28 MeV kinetic energy on high resistivity (100) Si were studied. The profile of primary defects was simulated. The defects produced by irradiation which act as traps were investigated. Thermally stimulated current measurements without externally applied bias were used, and for this the traps were charged by illuminating samples with 1000, 800, and 400 nm wavelengths. The discharge currents were recorded and modeled, and therefore the parameters of the traps were determined. The presence of I ions, heavier than Si, stopped into the target was modeled as a temperature independent electric field.

• OSTI ID: 22089590
• Journal Information: Applied Physics Letters, Vol. 101, Issue 24; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
IODINE
IODINE 127
IODINE IONS
IRRADIATION
KINETIC ENERGY
MEV RANGE 10-100
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SILICON
SIMULATION
TRAPS
WAVELENGTHS