Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation

Journal Article · Mon Dec 03 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4769370· OSTI ID:22089581

Gaubas, E.; Ceponis, T.; Jasiunas, A.; Uleckas, A.; Vaitkus, J. ^[1]; Cortina, E. ^[2]; Militaru, O. ^[3]

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1. Vilnius University, Institute of Applied Research, Vilnius LT-10222 (Lithuania)
2. Center for Cosmology, Particle Physics and Phenomenology, Universite catholique de Louvain, Louvain la Neuve B-1348 (Belgium)
3. Cyclotron Research Center, Universite catholique de Louvain, Louvain la Neuve B-1348 (Belgium)

The in situ examination of barrier capacitance charging, of generation and drift currents, and of carrier lifetime in Si structures during 25 MeV neutrons irradiation has been implemented to correlate radiation induced changes in carrier recombination, thermal release, and drift characteristics and to clarify their impact on detector performance. It has been shown that microwave probed photo-conductivity technique implemented in contact-less and distant manner can be a powerful tool for examination in wide dynamic range of carrier lifetime modified by radiation defects and for rather precise prediction of detector performance.

• OSTI ID: 22089581
• Journal Information: Applied Physics Letters, Vol. 101, Issue 23; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CARRIER LIFETIME
CRYSTAL DEFECTS
ELECTRIC CURRENTS
EVOLUTION
IRRADIATION
MEV RANGE 10-100
MICROWAVE RADIATION
NEUTRONS
PERFORMANCE
PHOTOCONDUCTIVITY
PHOTODETECTORS
PHYSICAL RADIATION EFFECTS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON