Effects of oxygen on electron beam induced deposition of SiO{sub 2} using physisorbed and chemisorbed tetraethoxysilane

Bishop, James; Toth, Milos; Phillips, Matthew; Lobo, Charlene

doi:10.1063/1.4767521

Title: Effects of oxygen on electron beam induced deposition of SiO{sub 2} using physisorbed and chemisorbed tetraethoxysilane

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Abstract

Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O{sub 2} with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO{sub 2} at room temperature. Here, we show that O{sub 2} inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O{sub 2} at room temperature.

Authors:

Bishop, James; Toth, Milos; Phillips, Matthew; Lobo, Charlene ^[1]

School of Physics and Advanced Materials, University of Technology, Sydney, P.O. Box 123, Broadway, New South Wales 2007 (Australia)

Publication Date:: Mon Nov 19 00:00:00 EST 2012

OSTI Identifier:: 22089514

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 101; Journal Issue: 21; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ADSORPTION; CHEMISORPTION; DECOMPOSITION; DEPOSITION; DISSOCIATION; ELECTRON BEAMS; IMPURITIES; OXYGEN; PRECURSOR; SILICA; SILICON OXIDES; SURFACES; TEMPERATURE RANGE 0273-0400 K

Citation Formats


                    Bishop, James, Toth, Milos, Phillips, Matthew, and Lobo, Charlene. Effects of oxygen on electron beam induced deposition of SiO{sub 2} using physisorbed and chemisorbed tetraethoxysilane.  United States: N. p., 2012. 
        Web.  doi:10.1063/1.4767521.

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                    Bishop, James, Toth, Milos, Phillips, Matthew, & Lobo, Charlene. Effects of oxygen on electron beam induced deposition of SiO{sub 2} using physisorbed and chemisorbed tetraethoxysilane.  United States.  https://doi.org/10.1063/1.4767521

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                    Bishop, James, Toth, Milos, Phillips, Matthew, and Lobo, Charlene. 2012.  
        "Effects of oxygen on electron beam induced deposition of SiO{sub 2} using physisorbed and chemisorbed tetraethoxysilane".  United States.  https://doi.org/10.1063/1.4767521.

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@article{osti_22089514,

  title        = {Effects of oxygen on electron beam induced deposition of SiO{sub 2} using physisorbed and chemisorbed tetraethoxysilane},

  author       = {Bishop, James and Toth, Milos and Phillips, Matthew and Lobo, Charlene},

  abstractNote = {Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O{sub 2} with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO{sub 2} at room temperature. Here, we show that O{sub 2} inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O{sub 2} at room temperature.},

  doi          = {10.1063/1.4767521},

  url          = {https://www.osti.gov/biblio/22089514},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 21,

  volume       = 101,

  place        = {United States},

  year         = {Mon Nov 19 00:00:00 EST 2012},

  month        = {Mon Nov 19 00:00:00 EST 2012}

}

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