Infrared characteristics of VO{sub 2} thin films for smart window and laser protection applications

Journal Article · Mon Nov 05 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4766287· OSTI ID:22089506

Zhangli, Huang; Sihai, Chen; Chaohong, Lv; Ying, Huang; Jianjun, Lai ^[1]

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1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

Vanadium dioxide (VO{sub 2}) films with a low semiconductor-to-metal transition temperature of 45 Degree-Sign C were fabricated through direct current magnetron sputtering followed by a post-annealing. Atomic force microscopy measurements show that the VO{sub 2} grain size is about one hundred of nanometers. Infrared (IR) characteristic is well investigated by applying a He-Ne laser power intensity measurement, and the result reveals that the VO{sub 2} film exhibits excellent IR switching property. Furthermore, solar smart window and laser protection experiments demonstrate that the obtained VO{sub 2} thin film is a promising material for the application in related fields.

• OSTI ID: 22089506
• Journal Information: Applied Physics Letters, Vol. 101, Issue 19; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ATOMIC FORCE MICROSCOPY
DEPOSITION
DIRECT CURRENT
GRAIN SIZE
HELIUM-NEON LASERS
INFRARED SPECTRA
MAGNETRONS
METALS
PHASE TRANSFORMATIONS
PROTECTIVE COATINGS
SEMICONDUCTOR MATERIALS
SWITCHES
THIN FILMS
TRANSITION TEMPERATURE
VANADIUM OXIDES