Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy
Journal Article
·
· Journal of Applied Physics
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
We report the self-assembly of InAs ring complexes on InP (100) substrates by droplet epitaxy. Single-ring, ring-disk complex, and concentric double-ring structures were formed by controlling the As beam flux and substrate temperature. A clear photoluminescence signal was detected in a sample where InAs rings were embedded in InGaAs.
- OSTI ID:
- 22089451
- Journal Information:
- Journal of Applied Physics, Vol. 112, Issue 6; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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