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Title: Enhancement of magnetoresistance using CoFe/Ru/CoFe synthetic ferrimagnetic pinned layer in BiFeO{sub 3} based spin-valves

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4745504· OSTI ID:22089365
; ; ; ; ;  [1];  [2];  [3];  [4];  [5]
  1. Department of Applied Physics, Graduate School of Engineering, Tohoku University, 6-6-05 Aoba Aramaki Aoba-ku, Sendai 980-8579 (Japan)
  2. Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, Binghamton, New York 13902 (United States)
  3. Tohoku University, Department of Instrumental Analysis, 6-6-11 Aoba, Aramaki, Aoba, Sendai 980-8579 (Japan)
  4. WPI Advanced Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
  5. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

SrTiO{sub 3} (100) sub/BiFeO{sub 3}/CoFe/Ru/CoFe/Cu/CoFe/Ta structure was prepared by a combination of chemical solution deposition and sputtering method, and followed by a systematical investigation for the structural, magnetic and magnetoresistance properties at room temperature (RT) as a function of CoFe and Ru thicknesses. It was revealed that introduction of synthetic CoFe/Ru/CoFe as a pinning layer increased the giant magentoresistance (MR) ratio to 8.3% at RT. This enhancement of MR ratio might be attributed to (i) the increase of pinning field, and (ii) suppression of the influence of the surface roughness of BiFeO{sub 3} by inserting the synthetic CoFe/Ru/CoFe layer.

OSTI ID:
22089365
Journal Information:
Applied Physics Letters, Vol. 101, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English