Post-growth surface smoothing of thin films of diindenoperylene

Journal Article · Mon Jul 16 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4737168· OSTI ID:22089283

Hinderhofer, A. ^[1]; Hosokai, T. ^[2]; Yonezawa, K.; Kato, K.; Kera, S.; Ueno, N. ^[3]; Gerlach, A.; Broch, K.; Frank, C.; Schreiber, F. ^[1]; Novak, J. ^[1]

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1. Institute for Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen 72076 (Germany)
2. Department of Materials and Science, Iwate University, Ueda 4-3-5, Morioka, Iwate 0208551 (Japan)
3. Graduate School of Advanced Integration Science, Chiba University,1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

We applied in situ x-ray reflectivity and ultraviolet photoelectron spectroscopy to study the impact of annealing on low temperature (200 K) deposited organic thin films of diindenoperylene (DIP) on SiO{sub 2} and indium tin oxide (ITO). At 200 K, DIP is crystalline on SiO{sub 2} and amorphous on ITO. Upon heating to room temperature, the roughness of DIP is reduced on both substrates, from 1.5 nm to 0.75 nm (SiO{sub 2}) and from 0.90 nm to 0.45 nm (ITO). The smoothing is accompanied by crystallization of the surface molecules, whereas the bulk structure of the films does not strongly reorganize.

• OSTI ID: 22089283
• Journal Information: Applied Physics Letters, Vol. 101, Issue 3; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTALLIZATION
HEATING
INDIUM ADDITIONS
MOLECULES
PHOTOELECTRON SPECTROSCOPY
REFLECTION
REFLECTIVITY
ROUGHNESS
SILICON OXIDES
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TIN OXIDES
ULTRAVIOLET RADIATION
X RADIATION