On the radiation hardness of (Mg,Zn)O thin films grown by pulsed-laser deposition

Journal Article · Mon Jul 02 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4733358· OSTI ID:22089262

Schmidt, Florian; Wenckstern, Holger von; Spemann, Daniel; Grundmann, Marius ^[1]

---

1. Universitaet Leipzig, Institut fuer Experimentelle Physik II, Linnestrasse 5, 04103 Leipzig (Germany)

We report on electrical properties and the generation of the E4 defect in pulsed-laser deposited Mg{sub x}Zn{sub 1-x}O thin films irradiated with 2.25 MeV protons. Whereas the electrical properties of the Schottky diodes as well as the net doping density of the samples did not change due to irradiation, the concentration of the E4 defect increased proportional to the applied dose as revealed by deep level transient spectroscopy. The generation rate {eta}, is for binary ZnO thin films about 40 cm{sup -1}, a factor of 3 higher than in melt-grown single crystals, and increases to about 100 cm{sup -1} for the Mg-alloyed thin films.

• OSTI ID: 22089262
• Journal Information: Applied Physics Letters, Vol. 101, Issue 1; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ENERGY BEAM DEPOSITION
LASER RADIATION
MAGNESIUM COMPOUNDS
MEV RANGE 01-10
MONOCRYSTALS
PHYSICAL RADIATION EFFECTS
PROTON BEAMS
PULSED IRRADIATION
RADIATION HARDENING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
THIN FILMS
ZINC OXIDES