Nanoporosity induced by ion implantation in deposited amorphous Ge thin films

Journal Article · Fri Jun 01 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4725427· OSTI ID:22089229

Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G. ^[1]; Bosco, L. ^[2]

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1. IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy)
2. Scuola Superiore di Catania, Via Valdisavoia 9, I-95123 Catania (Italy)

The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

• OSTI ID: 22089229
• Journal Information: Journal of Applied Physics, Vol. 111, Issue 11; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
DEPOSITION
EXPANSION
GERMANIUM
GERMANIUM IONS
GERMANIUM SILICIDES
ION IMPLANTATION
IRRADIATION
KEV RANGE 100-1000
LAYERS
NANOSTRUCTURES
PHYSICAL RADIATION EFFECTS
POROSITY
POROUS MATERIALS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS