skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Rhenium ion beam for implantation into semiconductors

Abstract

At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.

Authors:
; ; ; ; ;  [1]; ;  [2];  [1];  [3]
  1. Institute for Theoretical and Experimental Physics, Moscow (Russian Federation)
  2. National Research University of Electronic Technology ''MIET'', Moscow (Russian Federation)
  3. National University of Science and Technology ''MISIS'', Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22082788
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 83; Journal Issue: 2; Conference: ICIS 2011: 14. international conference on ion sources, Giardini-Naxos, Sicily (Italy), 12-16 Sep 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0034-6748
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GERMANIUM IONS; ION BEAMS; ION IMPLANTATION; ION SOURCES; QUANTUM DOTS; RHENIUM IONS; RHENIUM SILICIDES; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; VACUUM COATING

Citation Formats

Kulevoy, T V, Seleznev, D N, Alyoshin, M E, Kraevsky, S V, Yakushin, P E, Khoroshilov, V V, Gerasimenko, N N, Smirnov, D I, Fedorov, P A, National Research University of Electronic Technology ''MIET'', Moscow, and Temirov, A A. Rhenium ion beam for implantation into semiconductors. United States: N. p., 2012. Web. doi:10.1063/1.3673632.
Kulevoy, T V, Seleznev, D N, Alyoshin, M E, Kraevsky, S V, Yakushin, P E, Khoroshilov, V V, Gerasimenko, N N, Smirnov, D I, Fedorov, P A, National Research University of Electronic Technology ''MIET'', Moscow, & Temirov, A A. Rhenium ion beam for implantation into semiconductors. United States. https://doi.org/10.1063/1.3673632
Kulevoy, T V, Seleznev, D N, Alyoshin, M E, Kraevsky, S V, Yakushin, P E, Khoroshilov, V V, Gerasimenko, N N, Smirnov, D I, Fedorov, P A, National Research University of Electronic Technology ''MIET'', Moscow, and Temirov, A A. 2012. "Rhenium ion beam for implantation into semiconductors". United States. https://doi.org/10.1063/1.3673632.
@article{osti_22082788,
title = {Rhenium ion beam for implantation into semiconductors},
author = {Kulevoy, T V and Seleznev, D N and Alyoshin, M E and Kraevsky, S V and Yakushin, P E and Khoroshilov, V V and Gerasimenko, N N and Smirnov, D I and Fedorov, P A and National Research University of Electronic Technology ''MIET'', Moscow and Temirov, A A},
abstractNote = {At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.},
doi = {10.1063/1.3673632},
url = {https://www.osti.gov/biblio/22082788}, journal = {Review of Scientific Instruments},
issn = {0034-6748},
number = 2,
volume = 83,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2012},
month = {Wed Feb 15 00:00:00 EST 2012}
}