Anomalous transport of Sb in laser irradiated Ge

Journal Article · Mon Oct 22 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4764069· OSTI ID:22080507

Bruno, E; Scapellato, G G; Boninelli, S; Priolo, F; Privitera, V ^[1]; La Magna, A ^[2]; Cuscuna, M; Fortunato, G ^[3]; Napolitani, E ^[4]

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1. MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, 95123 Catania (Italy)
2. CNR-IMM, Zona Industriale VIII strada 5, 95121 Catania (Italy)
3. CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma (Italy)
4. MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy)

Excimer laser annealing is shown to be very promising to promote Sb incorporation in Ge up to concentrations as high as 1 Multiplication-Sign 10{sup 21} at./cm{sup 3}. However, we demonstrate that when Ge is melted by laser irradiation, a high excess of vacancies is generated in the molten region. These vacancies induce Sb electrical deactivation at the melt depth through the formation of Sb{sub m}-V{sub n} complexes that act as a sink for further Sb atoms, even leading Sb to back-diffuse towards the surface, against the concentration gradient. These results are fundamental for the realization of new generation Ge-based micro and optoelectronic devices.

• OSTI ID: 22080507
• Journal Information: Applied Physics Letters, Vol. 101, Issue 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANTIMONY
ATOMS
CRYSTALS
DEACTIVATION
DIFFUSION
EXCIMER LASERS
GERMANIUM
LASER RADIATION
SEMICONDUCTOR MATERIALS
VACANCIES