Hall effect measurements on InAs nanowires

Journal Article · Mon Oct 08 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4759124· OSTI ID:22080481

Bloemers, Ch; Grap, T; Lepsa, M I; Moers, J; Gruetzmacher, D; Lueth, H ^[1]; Trellenkamp, St ^[2]; Schaepers, Th ^[1]

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1. Peter Gruenberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany)
2. Peter Gruenberg Institute (PGI-8) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany)

We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.

• OSTI ID: 22080481
• Journal Information: Applied Physics Letters, Vol. 101, Issue 15; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CARRIER DENSITY
COMPARATIVE EVALUATIONS
ELECTRON BEAMS
HALL EFFECT
INDIUM ARSENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SURFACES