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Title: Hall effect measurements on InAs nanowires

We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Peter Gruenberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany)
  2. Peter Gruenberg Institute (PGI-8) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany)
  3. (Germany)
Publication Date:
OSTI Identifier:
22080481
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 101; Journal Issue: 15; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER DENSITY; COMPARATIVE EVALUATIONS; ELECTRON BEAMS; HALL EFFECT; INDIUM ARSENIDES; INTERFACES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SURFACES