Growth study of nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy
Abstract
Nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films were grown by plasma-assisted molecular beam epitaxy on a-plane ZnO substrates. A smooth surface morphology was accomplished under oxygen-rich growth conditions. The benefits of the use of ZnO substrates on the structural properties are reflected by a low-density of threading dislocations. Furthermore, no indications for the generation of basal plane stacking faults are found. The pseudomorphic growth on a-plane ZnO substrates efficiently locks the epitaxial Zn{sub 1-x}Mg{sub x}O films to the wurtzite structure up to x = 0.25. The Mg concentration is not constant and increases with larger thickness. The optical properties reflect the influence of alloy disorder.
- Authors:
-
- Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany)
- Universitaet der Bundeswehr Muenchen, Fakultaet fuer Luft- und Raumfahrttechnik, Werner-Heisenberg-Weg 39, 85577 Neubiberg (Germany)
- Philipps-Universitaet, Material Sciences Center-Structure and Technology Research Laboratory and Faculty of Physics, Hans-Meerwein-Strasse, 35032 Marburg (Germany)
- I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)
- Publication Date:
- OSTI Identifier:
- 22080448
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 101; Journal Issue: 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; DISLOCATIONS; FILMS; LAYERS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OXYGEN; PLASMA; SEMICONDUCTOR MATERIALS; STACKING FAULTS; SUBSTRATES; SURFACES; THICKNESS; ZINC OXIDES
Citation Formats
Laumer, Bernhard, I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Schuster, Fabian, Stutzmann, Martin, Bergmaier, Andreas, Dollinger, Guenther, Vogel, Stephen, Gries, Katharina I, Volz, Kerstin, and Eickhoff, Martin. Growth study of nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy. United States: N. p., 2012.
Web. doi:10.1063/1.4754076.
Laumer, Bernhard, I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Schuster, Fabian, Stutzmann, Martin, Bergmaier, Andreas, Dollinger, Guenther, Vogel, Stephen, Gries, Katharina I, Volz, Kerstin, & Eickhoff, Martin. Growth study of nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy. United States. https://doi.org/10.1063/1.4754076
Laumer, Bernhard, I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Schuster, Fabian, Stutzmann, Martin, Bergmaier, Andreas, Dollinger, Guenther, Vogel, Stephen, Gries, Katharina I, Volz, Kerstin, and Eickhoff, Martin. 2012.
"Growth study of nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy". United States. https://doi.org/10.1063/1.4754076.
@article{osti_22080448,
title = {Growth study of nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy},
author = {Laumer, Bernhard and I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen and Schuster, Fabian and Stutzmann, Martin and Bergmaier, Andreas and Dollinger, Guenther and Vogel, Stephen and Gries, Katharina I and Volz, Kerstin and Eickhoff, Martin},
abstractNote = {Nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films were grown by plasma-assisted molecular beam epitaxy on a-plane ZnO substrates. A smooth surface morphology was accomplished under oxygen-rich growth conditions. The benefits of the use of ZnO substrates on the structural properties are reflected by a low-density of threading dislocations. Furthermore, no indications for the generation of basal plane stacking faults are found. The pseudomorphic growth on a-plane ZnO substrates efficiently locks the epitaxial Zn{sub 1-x}Mg{sub x}O films to the wurtzite structure up to x = 0.25. The Mg concentration is not constant and increases with larger thickness. The optical properties reflect the influence of alloy disorder.},
doi = {10.1063/1.4754076},
url = {https://www.osti.gov/biblio/22080448},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 101,
place = {United States},
year = {Mon Sep 17 00:00:00 EDT 2012},
month = {Mon Sep 17 00:00:00 EDT 2012}
}
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