Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

Park, Hugh; Todorov, Stan; Colombeau, Benjamin; Rodier, Dennis; Kouzminov, Dimitry; Wei, Zou; Baonian, Guo; Khasgiwale, Niranjan; Decker-Lucke, Kurt

doi:10.1063/1.4766494

Title: Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

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Abstract

We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channel rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.

Authors:

Park, Hugh; Todorov, Stan; Colombeau, Benjamin; Rodier, Dennis; Kouzminov, Dimitry; Wei, Zou; Baonian, Guo; Khasgiwale, Niranjan; Decker-Lucke, Kurt ^[1]

Applied Materials, Varian Semiconductor Equipment, 35 Dory Road, Gloucester, Massachusetts 01930 (United States)

Publication Date:: Tue Nov 06 00:00:00 EST 2012

OSTI Identifier:: 22075736

Resource Type:: Journal Article

Journal Name:: AIP Conference Proceedings

Additional Journal Information:: Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; AMORPHOUS STATE; ANNEALING; ARSENIC; BORON; CARBON; CRYOGENICS; GERMANIUM; IMPLANTS; INDIUM; ION IMPLANTATION; LAYERS; NANOSTRUCTURES; NITROGEN IONS; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; TEMPERATURE RANGE 0273-0400 K; THRESHOLD DOSE

Citation Formats


                    Park, Hugh, Todorov, Stan, Colombeau, Benjamin, Rodier, Dennis, Kouzminov, Dimitry, Wei, Zou, Baonian, Guo, Khasgiwale, Niranjan, and Decker-Lucke, Kurt. Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies.  United States: N. p., 2012. 
        Web.  doi:10.1063/1.4766494.

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                    Park, Hugh, Todorov, Stan, Colombeau, Benjamin, Rodier, Dennis, Kouzminov, Dimitry, Wei, Zou, Baonian, Guo, Khasgiwale, Niranjan, & Decker-Lucke, Kurt. Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies.  United States.  https://doi.org/10.1063/1.4766494

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                    Park, Hugh, Todorov, Stan, Colombeau, Benjamin, Rodier, Dennis, Kouzminov, Dimitry, Wei, Zou, Baonian, Guo, Khasgiwale, Niranjan, and Decker-Lucke, Kurt. 2012.  
        "Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies".  United States.  https://doi.org/10.1063/1.4766494.

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@article{osti_22075736,

  title        = {Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies},

  author       = {Park, Hugh and Todorov, Stan and Colombeau, Benjamin and Rodier, Dennis and Kouzminov, Dimitry and Wei, Zou and Baonian, Guo and Khasgiwale, Niranjan and Decker-Lucke, Kurt},

  abstractNote = {We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channel rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.},

  doi          = {10.1063/1.4766494},

  url          = {https://www.osti.gov/biblio/22075736},
  journal      = {AIP Conference Proceedings},

  issn         = {0094-243X},

  number       = 1,

  volume       = 1496,

  place        = {United States},

  year         = {Tue Nov 06 00:00:00 EST 2012},

  month        = {Tue Nov 06 00:00:00 EST 2012}

}

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