Simulation of BF{sub 3} plasma immersion ion implantation into silicon

Journal Article · Tue Nov 06 00:00:00 EST 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4766531· OSTI ID:22075705

Burenkov, A; Hahn, A; Spiegel, Y; Etienne, H; Torregrosa, Frank ^[1]

---

1. Fraunhofer Institute for Integrated Systems and Device Technology Schottkystrasse 10, 91058 Erlangen (Germany)

Plasma immersion ion implantation from a BF{sub 3} plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulation code. An analytical model of plasma immersion ion implantation that assumes a uniform and isotropic implantation was implemented in a software module called IMP3D. The functionality of this module which was initially envisaged for the three-dimensional simulation of conventional ion implantation was extended to plasma immersion ion implantation and examples of 2D and 3D simulations from this are presented.

• OSTI ID: 22075705
• Journal Information: AIP Conference Proceedings, Vol. 1496, Issue 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
BORON
BORON FLUORIDES
COMPUTERIZED SIMULATION
ENERGY SPECTRA
I CODES
ION IMPLANTATION
ION MICROPROBE ANALYSIS
MASS SPECTRA
MASS SPECTROSCOPY
MONTE CARLO METHOD
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
THREE-DIMENSIONAL CALCULATIONS