Narrow-band N-resonance formed in thin rubidium atomic layers
- National Academy of Sciences of Armenia, Institute for Physical Research (Armenia)
The narrow-band N-resonance formed in a {Lambda} system of D{sub 1}-line rubidium atoms is studied in the presence of a buffer gas (neon) and the radiations of two continuous narrow-band diode lasers. Special-purpose cells are used to investigate the dependence of the process on vapor column thickness L in millimeter, micrometer, and nanometer ranges. A comparison of the dependences of the N-resonance and the electromagnetically induced transparency (EIT) resonance on L demonstrates that the minimum (record) thickness at which the N-resonance can be detected is L = 50 {mu}m and that a high-contrast EIT resonance can easily be formed even at L Almost-Equal-To 800 nm. The N-resonance in a magnetic field for {sup 85}Rb atoms is shown to split into five or six components depending on the magnetic field and laser radiation directions. The results obtained indicate that levels F{sub g} = 2, 3 are initial and final in the N-resonance formation. The dependence of the N-resonance on the angle between the laser beams is analyzed, and practical applications are noted.
- OSTI ID:
- 22069275
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 115, Issue 5; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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