Influence of annealing temperature on electronic and dielectric properties of ZrO{sub 2} thin films on Si
- Department of Physics, Sri Venkateswara University, Tirupati - 517 502 (India)
Zirconium oxide (ZrO{sub 2}) films were deposited on (100) silicon substrates by DC reactive magnetron sputtering of zirconium target at an oxygen partial pressure of 6 Multiplication-Sign 10{sup -2} Pa. The as-deposited films were annealed in air for 1 hour at different temperatures in the range 773 - 1173 K. The influence of annealing temperature on the structural properties of ZrO{sub 2} films and the electrical properties like Capacitance-Voltage and Current-Voltage of the capacitors of the type Al/ZrO{sub 2}/p-Si were studied. The capacitance and dielectric constant of the capacitors were found to increase with increase in annealing temperature from 773 to 973 K, however, with further increase in annealing temperature to 1173 K they were found to decrease. In addition, the leakage current density was decreased from 1 Multiplication-Sign 10{sup -6} to 4 Multiplication-Sign 10{sup -7} A/cm{sup 2} at 1V gate bias voltage and the electrical conduction mechanism was dominated by Schottky emission for all the films in lower electric fields.
- OSTI ID:
- 22068992
- Journal Information:
- AIP Conference Proceedings, Vol. 1451, Issue 1; Conference: Indian Vacuum Society symposium on thin films, Mumbai (India), 9-12 Nov 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of postdeposition annealing on the electrical properties of β-Ga{sub 2}O{sub 3} thin films grown on p-Si by plasma-enhanced atomic layer deposition
Materials characterization of ZrO{sub 2}--SiO{sub 2} and HfO{sub 2}--SiO{sub 2} binary oxides deposited by chemical solution deposition
Related Subjects
ALUMINIUM
ANNEALING
CAPACITANCE
CURRENT DENSITY
DEPOSITION
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
LEAKAGE CURRENT
PARTIAL PRESSURE
PERMITTIVITY
SCHOTTKY EFFECT
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
ZIRCONIUM OXIDES