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Title: Laser produced streams of Ge ions accelerated and optimized in the electric fields for implantation into SiO{sub 2} substrates

Ge crystals were prepared by means of laser-induced ion implantation technique. A Nd:YAG pulsed laser (repetition rate: 10 Hz; pulse duration: 3.5 ns; pulse energy: {approx}0.5 J) was used both as an ion source and to carry out the ablation processes. The optimization of the laser-generated ion beam parameters in a broad energy and current density range has been obtained controlling the electrostatic field parameters. Numerical simulations of the focusing system, performed adopting an OPERA 3D code, and an investigation of the ion characteristics, using the ion time-of-flight method, have allowed to optimize the preparation parameters. The structural properties of the samples were investigated by means of x-ray photoelectron, micro-Raman spectroscopies, and scanning electron microscopy techniques. Experimental results show that, by appropriately varying the ion implantation parameters and by a post-preparation annealing treatment, it is possible to achieve the development of a micrometer-sized crystalline Ge phase and/or an amorphous one.
Authors:
; ; ;  [1] ; ;  [2] ;  [3] ; ;  [4] ;  [5]
  1. Institute of Plasma Physics and Laser Microfusion, Warsaw (Poland)
  2. Dipartimento di Fisica, Universita di Messina, Messina (Italy)
  3. (Italy)
  4. Dipartimento di Fisica della Materia e Ingegneria Elettronica, Universita di Messina, Messina (Italy)
  5. INFN- Laboratori Nazionali del Sud, Catania (Italy)
Publication Date:
OSTI Identifier:
22066297
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 83; Journal Issue: 2; Conference: ICIS 2011: 14. international conference on ion sources, Giardini-Naxos, Sicily (Italy), 12-16 Sep 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ABLATION; ANNEALING; COMPUTERIZED SIMULATION; CRYSTALS; CURRENT DENSITY; ELECTRIC FIELDS; GERMANIUM; GERMANIUM IONS; ION BEAMS; ION IMPLANTATION; ION SOURCES; NEODYMIUM LASERS; PULSED IRRADIATION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; TIME-OF-FLIGHT METHOD; X-RAY PHOTOELECTRON SPECTROSCOPY