Solid-state source of atomic oxygen for low-temperature oxidation processes: Application to pulsed laser deposition of TiO{sub 2}:N films
- Materials and Structures Laboratory, Tokyo Institute of Technology, R3-34, Nagatsuta 4259, Yokohama 226-8503 (Japan)
An atomic oxygen (AO) source has been redesigned to coordinate with a pulsed laser deposition system and used to grow nitrogen-doped TiO{sub 2} films by deposition of TiN and simultaneous irradiation of the substrate with AO. The AO source uses an incandescently heated thin tube of zirconia as an oxygen permeation media to generate pure AO of low kinetic energy. The emission flux is calibrated using a silver-coated quartz crystal microbalance. The thin shape of the probe and transverse emission geometry of this emission device allow the emission area to be positioned close to the substrate surface, enhancing the irradiation flux at the substrate. AO irradiation is crucial for formation of TiO{sub 2} phases via oxidation of the deposited TiN laser plume, and is effective for decrease of the substrate temperature for crystallization of anatase phase to as low as around 200 deg. C.
- OSTI ID:
- 22063799
- Journal Information:
- Review of Scientific Instruments, Vol. 83, Issue 2; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTALLIZATION
CRYSTALS
DOPED MATERIALS
ENERGY BEAM DEPOSITION
LASER RADIATION
MICROBALANCES
NITROGEN
OXIDATION
OXYGEN
PULSED IRRADIATION
QUARTZ
SILVER
TEMPERATURE RANGE 0065-0273 K
THIN FILMS
TITANIUM NITRIDES
TITANIUM OXIDES
ZIRCONIUM OXIDES