Atom chips on direct bonded copper substrates

Journal Article · Tue Feb 15 00:00:00 EST 2011 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3529434· OSTI ID:22062238

Squires, Matthew B; Stickney, James A; Carlson, Evan J; Baker, Paul M; Buchwald, Walter R; Wentzell, Sandra; Miller, Steven M ^[1]

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1. Air Force Research Laboratory, Hanscom AFB, Massachusetts 01731 (United States)

We present the use of direct bonded copper (DBC) for the straightforward fabrication of high power atom chips. Atom chips using DBC have several benefits: excellent copper/substrate adhesion, high purity, thick (>100 {mu}m) copper layers, high substrate thermal conductivity, high aspect ratio wires, the potential for rapid (<8 h) fabrication, and three-dimensional atom chip structures. Two mask options for DBC atom chip fabrication are presented, as well as two methods for etching wire patterns into the copper layer. A test chip, able to support 100 A of current for 2 s without failing, is used to determine the thermal impedance of the DBC. An assembly using two DBC atom chips is used to magnetically trap laser cooled {sup 87}Rb atoms. The wire aspect ratio that optimizes the magnetic field gradient as a function of power dissipation is determined to be 0.84:1 (height:width).

• OSTI ID: 22062238
• Journal Information: Review of Scientific Instruments, Vol. 82, Issue 2; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ADHESION
ASPECT RATIO
COOLING
COPPER
ELECTRIC CURRENTS
ELECTRONIC EQUIPMENT
ETCHING
FABRICATION
IMPEDANCE
MAGNETIC FIELDS
RUBIDIUM 87
SUBSTRATES
THERMAL CONDUCTIVITY
TRAPS
WIRES