Improvement of electrical and optical properties of molybdenum oxide thin films by ultralow pressure sputtering method

Journal Article · Tue May 15 00:00:00 EDT 2012 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3692753· OSTI ID:22054157

Sook Oh, Myeong; Seob Yang, Bong; Ho Lee, Jong; Ha Oh, Seong; Soo Lee, Ung; Jang Kim, Yoon; Joon Kim, Hyeong; Soo Huh, Myung ^[1]

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1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744 (Korea, Republic of)

In this work, we investigated the structural, electrical and optical properties of molybdenum oxide thin films deposited by the reactive dc magnetron sputtering method. The molybdenum oxide films were prepared at sputtering pressures ranging from 6.7 x 10{sup -1} to 6.7 x 10{sup -2} Pa. In order to promote their electrical conductivity, all the deposited MoO{sub x} films were annealed in Ar ambient at 450 deg. C for 8 h. The resistivity of the MoO{sub x} films varied from 10{sup -4} to 10{sup -2}{Omega} cm depending on the O{sub 2} content in the sputtering ambient. The lowering of the resistivity of the MoO{sub 2} films was mainly attributed to the formation of a monoclinic MoO{sub 2} polycrystalline phase. As the sputtering pressure decreased, the content of monoclinic polycrystalline MoO{sub 2} phase increased, resulting in low resistivity films. The formation of the dominant MoO{sub 2} phase at lower sputtering pressures was attributed to the stress induced crystallization. The post-deposition annealed (PDA) MoO{sub x} film, deposited at an ultralow sputtering pressure (6.7 x 10{sup -2} Pa) and O{sub 2} content of 40%, had an atomic ratio of O to Mo {approx_equal} 2.85 and was highly transparent and conductive: the transmittance in the visible wavelength range of 400-500 nm was about 73% and the resistivity was 1.05 x 10{sup -3}{Omega} cm. This result is superior to those of MoO{sub x} films epitaxially grown by the pulse laser deposition method.

• OSTI ID: 22054157
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 30, Issue 3; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTALLIZATION
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
EPITAXY
LASER RADIATION
MAGNETRONS
MOLYBDENUM OXIDES
MONOCLINIC LATTICES
OPTICAL PROPERTIES
POLYCRYSTALS
PULSED IRRADIATION
SPUTTERING
STRESSES
THIN FILMS
VISIBLE RADIATION