Atomic layer deposition of Al-doped ZnO films using ozone as the oxygen source: A comparison of two methods to deliver aluminum

Journal Article · Sun Jan 15 00:00:00 EST 2012 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3666030· OSTI ID:22054141

Hai, Yuan; Bing, Luo; Dan, Yu; Cheng, An-jen; Campbell, Stephen A; Gladfelter, Wayne L ^[1]

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1. Department of Electrical and Computer Engineering and Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455 and School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaan'xi 710025 (China)

Aluminum-doped ZnO films were prepared by atomic layer deposition at 250 deg. C using diethylzinc (DEZ), trimethylaluminum (TMA), and ozone as the precursors. Two deposition methods were compared to assess their impact on the composition, structural, electrical, and optical properties as a function of Al concentration. The first method controlled the Al concentration by changing the relative number of Al to Zn deposition cycles; a process reported in the literature where water was used as the oxygen source. The second method involved coinjection of the DEZ and TMA during each cycle where the partial pressures of the precursors control the aluminum concentration. Depth profiles of the film composition using Auger electron spectroscopy confirmed a layered microstructure for the films prepared by the first method, whereas the second method led to a homogeneous distribution of the aluminum throughout the ZnO film. Beneath the surface layer the carbon concentrations for all of the films were below the detection limit. Comparison of their electrical and optical properties established that films deposited by coinjection of the precursors were superior.

• OSTI ID: 22054141
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 30, Issue 1; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ALUMINIUM
AUGER ELECTRON SPECTROSCOPY
CARBON
DEPOSITION
DEPTH DOSE DISTRIBUTIONS
DOPED MATERIALS
MICROSTRUCTURE
OPTICAL PROPERTIES
OXYGEN
OZONE
PARTIAL PRESSURE
PRECURSOR
SENSITIVITY
THIN FILMS
WATER
ZINC OXIDES