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Title: Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

The authors report in detail on the reactive plasma etching properties of tellurium and demonstrate a high quality etching process using hydrogen, methane, and argon. Very low loss planar ridge waveguides are demonstrated. Optical losses in tellurium dioxide waveguides below 0.1 dB/cm in most of the near infrared region of the electromagnetic spectrum and at 1550 nm have been achieved--the lowest ever reported by more than an order of magnitude and clearly suitable for planar integrated devices. The etch process is also shown to be suitable for chalcogenide glasses which may be of importance in applications such as phase change memory devices and nonlinear integrated optics.
Authors:
;  [1]
  1. Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)
Publication Date:
OSTI Identifier:
22054017
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 29; Journal Issue: 1; Other Information: (c) 2011 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ARGON; ETCHING; GLASS; HYDROGEN; MEMORY DEVICES; METHANE; NEAR INFRARED RADIATION; NONLINEAR OPTICS; PHASE CHANGE MATERIALS; PLASMA; SPECTRA; TELLURIUM; WAVEGUIDES