Comparative study on passivation of GaAs{sub 0.86}P{sub 0.14}/Al{sub 0.6}Ga{sub 0.4}As near-surface quantum well

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3490021· OSTI ID:22054002

Pal, Suparna; Singh, S D; Porwal, S; D'Souza, S W; Barman, S R; Oak, S M ^[1]

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1. Semiconductor Laser Section, Solid State Laser Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

The authors report a comparative study on ex situ passivation of a near-surface GaAs{sub 0.86}P{sub 0.14}/Al{sub 0.6}Ga{sub 0.4}As quantum well using various sulfide solutions and nitrogen plasma treatments. The built-in surface electric field is changed via band bending by applying various surface passivation conditions. The band bending is measured using x-ray photoelectron spectroscopy. Reduction in surface electric field in the range of 10-35 kV/cm is observed depending on different passivation conditions. The photoreflectance spectra show enhancement in intensity and blueshift of {approx}3 meV accompanied by significant reduction in the broadening parameter of the observed e{sub 1}-lh{sub 1} transitions. Among all the methods studied here, passivation by Na{sub 2}S{center_dot}xH{sub 2}O is found to be most effective as it removes the native oxide layer completely leading to almost flat band condition.

• OSTI ID: 22054002
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 6; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ALUMINIUM COMPOUNDS
BENDING
ELECTRIC FIELDS
GALLIUM ARSENIDES
NITROGEN
PASSIVATION
PLASMA
PROCESSING
QUANTUM WELLS
REDUCTION
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SURFACES
X-RAY PHOTOELECTRON SPECTROSCOPY