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Title: Anodization of aluminum and silicon in plasma of a non-self-sustained glow discharge

Abstract

The results of anodization of aluminum and silicon in an oxygen plasma are presented. The plasma was generated by a non-self-sustained glow discharge with a hollow cathode excited by an electron beam at the oxygen pressure of 20 Pa. The density of the current flowing through the anodized specimen did not exceed 1.5 mA/cm{sup 2}, and its temperature was 200-250 Degree-Sign C. Continuous Al{sub 2}O{sub 3} and SiO{sub 2} films were formed on the aluminum and silicon surfaces. The growth rate of the oxide layers was 150-200 nm/h for Al{sub 2}O{sub 3} and 400-800 nm/h for SiO{sub 2}.

Authors:
;  [1]
  1. Tomsk State University of Control Systems and Radioelectronics (Russian Federation)
Publication Date:
OSTI Identifier:
22047445
Resource Type:
Journal Article
Journal Name:
Plasma Physics Reports
Additional Journal Information:
Journal Volume: 37; Journal Issue: 13; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-780X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ALUMINIUM; ALUMINIUM OXIDES; ANODIZATION; ELECTRIC CURRENTS; ELECTRON BEAMS; GLOW DISCHARGES; HOLLOW CATHODES; LAYERS; OXYGEN; PLASMA; PLASMA DENSITY; SILICON; SILICON OXIDES; SURFACES

Citation Formats

Burachevsky, Yu. A., E-mail: office@tusur.ru, Burdovitsin, V A, and Oks, E M. Anodization of aluminum and silicon in plasma of a non-self-sustained glow discharge. United States: N. p., 2011. Web. doi:10.1134/S1063780X11120014.
Burachevsky, Yu. A., E-mail: office@tusur.ru, Burdovitsin, V A, & Oks, E M. Anodization of aluminum and silicon in plasma of a non-self-sustained glow discharge. United States. https://doi.org/10.1134/S1063780X11120014
Burachevsky, Yu. A., E-mail: office@tusur.ru, Burdovitsin, V A, and Oks, E M. 2011. "Anodization of aluminum and silicon in plasma of a non-self-sustained glow discharge". United States. https://doi.org/10.1134/S1063780X11120014.
@article{osti_22047445,
title = {Anodization of aluminum and silicon in plasma of a non-self-sustained glow discharge},
author = {Burachevsky, Yu. A., E-mail: office@tusur.ru and Burdovitsin, V A and Oks, E M},
abstractNote = {The results of anodization of aluminum and silicon in an oxygen plasma are presented. The plasma was generated by a non-self-sustained glow discharge with a hollow cathode excited by an electron beam at the oxygen pressure of 20 Pa. The density of the current flowing through the anodized specimen did not exceed 1.5 mA/cm{sup 2}, and its temperature was 200-250 Degree-Sign C. Continuous Al{sub 2}O{sub 3} and SiO{sub 2} films were formed on the aluminum and silicon surfaces. The growth rate of the oxide layers was 150-200 nm/h for Al{sub 2}O{sub 3} and 400-800 nm/h for SiO{sub 2}.},
doi = {10.1134/S1063780X11120014},
url = {https://www.osti.gov/biblio/22047445}, journal = {Plasma Physics Reports},
issn = {1063-780X},
number = 13,
volume = 37,
place = {United States},
year = {Thu Dec 15 00:00:00 EST 2011},
month = {Thu Dec 15 00:00:00 EST 2011}
}