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Title: The de Haas-van Alphen effect in nanostructures of cadmium fluoride

Journal Article · · Semiconductors
 [1]; ; ;  [2];  [1]
  1. St. Petersburg State Polytechnical University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

Measurements of the field and temperature dependences of static magnetic susceptibility demonstrate de Haas-van Alphen oscillations at high temperatures and low magnetic fields in sandwich nanostructures, which are represented by an ultranarrow p-type CdF{sub 2} quantum well confined by {delta} barriers heavily doped with boron on the surface of an n-type CdF{sub 2} crystal. The temperature dependences of the de Haasvan Alphen oscillation amplitudes indicate a small value of the effective mass of two-dimensional holes, as a result of which, the strong field assumption, {mu}B Much-Greater-Than 1, is fulfilled at high temperatures. It is for the first time that a periodic variation in the de Haas-van Alphen oscillation frequency is detected and is accompanied by a diamagnetic response as temperature is increased. This phenomenon manifests itself as synchronous temperature oscillations of the density and effective mass of two-dimensional holes as a result of the mesoscopic properties of {delta} barriers.

OSTI ID:
22039053
Journal Information:
Semiconductors, Vol. 46, Issue 1; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English

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