Stress-induced VO{sub 2} films with M2 monoclinic phase stable at room temperature grown by inductively coupled plasma-assisted reactive sputtering

Journal Article · Sun Apr 01 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3700210· OSTI ID:22038899

Okimura, Kunio; Watanabe, Tomo ^[1]; Sakai, Joe ^[2]

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1. School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan)
2. GREMAN, UMR 7347 CNRS, Universite Francois Rabelais de Tours, Parc de Grandmont 37200 Tours (France)

We report on growth of VO{sub 2} films with M2 monoclinic phase stable at room temperature under atmospheric pressure. The films were grown on quartz glass and Si substrates by using an inductively coupled plasma-assisted reactive sputtering method. XRD-sin{sup 2}{Psi} measurements revealed that the films with M2 phase are under compressive stress in contrast to tensile stress of films with M1 phase. Scanning electron microscopy observations revealed characteristic crystal grain aspects with formation of periodical twin structure of M2 phase. Structural phase transition from M2 to tetragonal phases, accompanied by a resistance change, was confirmed to occur as the temperature rises. Growth of VO{sub 2} films composed of M2 phase crystalline is of strong interest for clarifying nature of Mott transition of strongly correlated materials.

• OSTI ID: 22038899
• Journal Information: Journal of Applied Physics, Vol. 111, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPRESSION STRENGTH
CRYSTAL GROWTH
CRYSTALS
ELECTRIC CONDUCTIVITY
MICROSTRUCTURE
MONOCLINIC LATTICES
PHASE TRANSFORMATIONS
PLASMA
QUARTZ
SCANNING ELECTRON MICROSCOPY
SPUTTERING
STRESSES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TENSILE PROPERTIES
THIN FILMS
VANADIUM OXIDES
X-RAY DIFFRACTION