Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0047 (Japan)
- National Institute for Materials Science, Tsukuba 305-0047 (Japan)
- Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577 (Japan)
The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co{sub 25}Fe{sub 75}){sub 100-x}B{sub x}/MgO/(Co{sub 25}Fe{sub 75}){sub 100-x}B{sub x} (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x = 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co{sub 25}Fe{sub 75}){sub 67}B{sub 33}, while good epitaxy was observed between (001) textured MgO and (Co{sub 25}Fe{sub 75}){sub 78}B{sub 22} electrodes.
- OSTI ID:
- 22038864
- Journal Information:
- Journal of Applied Physics, Vol. 111, Issue 4; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of annealing on the temperature dependence of inelastic tunneling contributions vis-à-vis tunneling magnetoresistance and barrier parameters in CoFe/MgO/NiFe magnetic tunnel junctions
Giant tunneling magnetoresistance up to 410% at room temperature in fully epitaxial Co/MgO/Co magnetic tunnel junctions with bcc Co(001) electrodes